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january 2014 docid025618 rev 1 1 / 11 this is preliminary information on a new product foreseen to be developed. details are subject to change without notice. www.st.com STL42P4LLF6 p - channel 40 v, 0.016 typ., 10 a stripfet? vi deepgate? power mosfet in a powerflat? 5x6 package datasheet - target specification figure 1 : internal schematic diagram features order code v ds r ds(on) max i d p tot STL42P4LLF6 40 v 0.022 ? 10 a 4.8 w ? r ds(on) * q g industry benchmark ? extremely low on - resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is a p - channel power mosfet developed using the 6 t h generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. table 1: device summary order code marking package packaging STL42P4LLF6 42p4llf6 powerflat tm 5x6 tape and reel for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
electrical ratings STL42P4LLF6 2 / 11 docid025618 rev 1 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 40 v v gs gate - source voltage 20 v i d (1) drain current (continuous) at t c = 25 c 42 a i d (1) drain current (continuous) at t c = 100 c 29 i d (2) drain current (continuous) at t pcb = 25 c 10 i d (2) drain current (continuous) at t pcb = 100 c 7.5 a i d (1) (3) drain current (pulsed) 168 a i dm (2) (3) drain current (pulsed) 40 a p tot (1) total dissipation at t c = 25 c 75 w p tot (2) total dissipation at t pcb = 25 c 4.8 w derating factor 0.03 w/c t stg storage temperature - 55 to 175 c t j max. operating junction temperature 150 c notes: (1) the value is rated according to r thj - c (2) this value is rated according to r thj - pcb (3) pulse width is limited by safe operating area table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max 2.00 c/w r thj - pcb (1) thermal resistance junction - pcb, single operation 31.3 c/w notes: (1) when mounted on fr - 4 board of 1 inch2, 2oz cu, steady state for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
STL42P4LLF6 electrical characteristics docid025618 rev 1 3 / 11 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = 250 a 40 v i dss zero gate voltage drain current v gs = 0, v ds = 40 v v ds = 40 v, t c = 125 c 1 a 10 i gss gate - body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 5 a 0.016 0.022 ? v gs = 4.5 v, i d = 5 a 0.025 0.035 ? table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 32 v, f = 1 mhz, v gs = 0 - 2300 - pf c oss output capacitance - 325 - pf c rss reverse transfer capacitance - 120 - pf q g total gate charge v dd = 32 v, id = 10 a, v gs = 4.5 v - 22 - nc q gs gate - source charge - tbd - nc q gd gate - drain charge - tbd - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 32 v, i d = 5 a, r g = 4.7 ?, v gs = 10 v - tbd - ns t r rise time - tbd - ns t d(off) turn - off delay time - tbd - ns t f fall time - tbd - ns for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
electrical characterist ics STL42P4LLF6 4 / 11 docid025618 rev 1 table 7: source drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 10 a i sdm (1) source - drain current (pulsed) - 40 a v sd (2) forward on voltage i sd = 5 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd = 16 v, t j = 150 c - tbd ns q rr reverse recovery charge - tbd nc i rrm reverse recovery current - tbd a notes: (1) pulse width limited by safe operating area (2) pulsed: pulse duration = 300 s, duty cycle 1.5 % for the p - channel power mosfets the actual polarity of the voltages and the current must be reversed.
STL42P4LLF6 test circuits docid025618 rev 1 5 / 11 3 test circuits figure 2 : switching times test circuit for resistive load figure 3 : gate charge test circuit figure 4 : source - drain diode forward characteristics
package mechanical data STL42P4LLF6 6 / 11 docid025618 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark. 4.1 powerflat 5x6 type s - r package mechanical data figure 5 : powerflat? 5x6 type s - r drawing 5 8 4 1 pin 1 identification 1 4 5 8 pin 1 identification
STL42P4LLF6 package mechanical data docid025618 rev 1 7 / 11 table 8: powerflat 5x6 type s - r mechan ical data dim. mm min. typ. max. a 0.80 1.00 a1 0.02 0.05 a2 0.25 b 0.30 0.50 d 5.00 5.20 5.40 e 5.95 6.15 6.35 d2 4.11 4.31 e2 3.50 3.70 e 1.27 l 0.60 0.80 k 1.275 1.575 figure 6 : powerflat? 5x6 recommended footprint (dimensions are in mm)
packaging mechanical data STL42P4LLF6 8 / 11 docid025618 rev 1 5 packaging mechanical data 5.1 powerflat? 5x6 packaging mechanical data figure 7 : powerflat? 5x6 tape (dimensions are in millimeters) figure 8 : powerflat? 5x6 package orientation in carrier tape
STL42P4LLF6 packaging mechanical data docid025618 rev 1 9 / 11 figure 9 : powerflat? 5x6 reel
revision history STL42P4LLF6 10 / 11 docid025618 rev 1 6 revision history table 9: document revision history date r evision changes 28 - jan - 2014 1 first release.
STL42P4LLF6 docid025618 rev 1 11 / 11 please read carefully information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (" st") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. all st products are sold pursuant to sts terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st assumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no lic ense, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. if an y part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoeve r of such third party products or services or any intellectual property contained therein. unless ot herwise set forth in sts terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purc haser shall use products at purchasers sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for "automotive, automotive safety or medical" industry domains according to st produ ct design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set for th in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatso ever, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 st microelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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